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| CMLM0705 M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLM0705 is a Multi Discrete Module TM consisting of a single PNP Transistor and a Schottky Diode packaged in a space saving PICOminiTM SOT-563 case. This device is designed for small signal general purpose applications where size and operational efficiency are prime requirements. * Combination: Small Signal Switching PNP Transistor and Low VF Schottky Diode. * Complementary Device: CMLM2205 MARKING CODE: C75 350 -65 to +150 357 90 60 6.0 600 40 500 3.5 10 UNITS mW C C/W UNITS V V V mA UNITS V mA A A SYMBOL PD TJ, Tstg JA SYMBOL VCBO VCEO VEBO IC SYMBOL VRRM IF IFRM IFSM SOT-563 CASE MAXIMUM RATINGS (SOT-563 Package): (TA=25C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance MAXIMUM RATINGS Q1: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current MAXIMUM RATINGS D1: (TA=25C) Peak Repetitive Reverse Voltage Continuous Forward Current Peak Repetitive Forward Current, tp 1ms Forward Surge Current, tp = 8ms ELECTRICAL CHARACTERISTICS Q1: (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE TEST CONDITIONS VCB=50V VCB=50V, TA=125C VCE=30V, VBE=0.5V IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=10V, IC=500mA MIN TYP MAX 10 10 50 UNITS nA A nA V V V V V V V 90 60 5.0 115 0.113 0.280 0.2 0.7 1.3 2.6 100 100 100 100 75 205 300 110 R0 (06-October 2004) Central CMLM0705 TM M U LT I D I S C R E T E M O D U L E TM SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE MIN 200 MAX 8.0 30 45 10 40 100 80 30 20 100 40 0.13 0.21 0.27 0.35 0.47 50 UNITS MHz pF pF ns ns ns ns ns ns A A V V V V V V pF Semiconductor Corp. ELECTRICAL CHARACTERISTICS Q1 (continued) SYMBOL TEST CONDITIONS fT VCE=20V, IC=50mA, f=100MHz Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=2.0V, IC=0, f=1.0MHz ton VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA td VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA tr VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA toff VCC=6.0V, IC=150mA, IB1=IB2=15mA ts VCC=6.0V, IC=150mA, IB1=IB2=15mA tf VCC=6.0V, IC=150mA, IB1=IB2=15mA ELECTRICAL CHARACTERISTICS D1 (TA=25C) IR VR= 10V IR VR= 30V BVR IR= 500A VF IF= 100A VF IF= 1.0mA VF IF= 10mA VF IF= 100mA VF IF= 500mA CT VR= 1.0V, f=1.0 MHz SOT-563 - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 MARKING CODE: C75 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) CATHODE D1 4) ANODE D1 5) ANODE D1 6) COLLECTOR Q1 R0 (06-October 2004) |
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